Regular papers from sessions ESSDERC

Note: Some presentations are reduced/adapted versions of the original ones

  • • "Performance Limit of Parallel Electric Field Tunnel FET and Improvement by Modified Gate and Channel Configurations" Y. Morita, T. Mori, S. Migita, W. Mizubayashi, A. Tanabe, K. Fukuda, T. Matsukawa, K. Endo, S. O'Uchi, Y. Liu, M. Masahara, H. Ota presentation
  • • "On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices" A. Revelant, P. Palestri, P. Osgnach, D. Lizzit, L. Selmi
  • • "Characterization of Border Traps in III-V MOSFETs Using an RF Transconductance Method" S. Johansson, J. Mo, E. Lind
  • • "Electron Delay Analysis and Image Charge Effect in AlGaN/GaN HEMT on Silicon Substrate" A. Agboton, N. Defrance, P. Altuntas, V. Avramovic, A. Cutivet, R. Ouhachi, J. De Jaeger, S. Bouzid-Driad, H. Maher, M. Renvoise, P. Frijlink presentation
  • • "Influence of Fluorine-Based Dry Etching on Electrical Parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors" D. Bisi, M. Meneghini, A. Stocco, G. Cibin, A. Pantellini, A. Nanni, C. Lanzieri, E. Zanoni, G. Meneghesso
  • • "Impact of Process Variability on a Frequency-Addressed NEMS Array Sensor Used for Gravimetric Detection" O. Martin, E. Colinet, E. Sage, C. Dupré, P. Villard, S. Hentz, L. Duraffourg, T. Ernst presentation
  • • "Complementary N- and P-Type TFETs on the Same InAs/Al0:05Ga0:95Sb Platform" E. Baravelli, E. Gnani, R. Grassi, A. Gnudi, S. Reggiani, G. Baccarani
  • • "Boosting InAs TFET on-Current Above 1 mA/µm with No Leakage Penalty" G. Betti Beneventi, E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani presentation
  • • "Full-Band Simulation of P-Type Ultra-Scaled Silicon Nanowire Transistors" A. Szabó, M. Luisier presentation
  • • "Gate Stack Optimization to Minimize Power Consumption in Super-Lattice FETs" P. Maiorano, E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani
  • • "An Experimental Study of Integrated DMOS Transistors with Increased Energy Capability" T. Zawischka, M. Pfost, M. Ebli, D. Costachescu presentation
  • • "Porous Si Dielectric Parameter Extraction for Use in RF Passive Device Integration: Measurements and Simulations" P. Sarafis, E. Hourdakis, A. Nassiopoulou presentation
  • • "4H-SiC MESFET Specially Designed and Fabricated for High Temperature Integrated Circuits" M. Alexandru, V. Banu, P. Godignon, M. Vellvehi, J. Millan
  • • "Advantage of TiN Schottky Gate Over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT" T. Kawanago, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai
  • • "Monolithic Fabrication of a Planar Gunn Diode and a pHEMT Side-by-Side" V. Papageorgiou, A. Khalid, M. Steer, C. Li, D. Cumming
  • • "Impact of T-Gate Stem Height on Parasitic Gate Delay Time in InGaAs-HEMTs" T. Yoshida, K. Kobayashi, T. Otsuji, T. Suemitsu
  • • "Role of Junction Depth in Light Emission from Silicon P-I-N LEDs" G. Piccolo, A. Sammak, R. Hueting, J. Schmitz, L. Nanver presentation
  • • "Filter-Less Color Sensor in Standard CMOS Technology" G. Batistell, J. Sturm
  • • "New Color Sensor Concept Based on Single Spectral Tunable Photodiode" A. Wachowiak, S. Slesazeck, P. Jordan, J. Holz, T. Mikolajick presentation
  • • "Towards Rectennas for Solar Energy Harvesting" N. Sedghi, J. Zhang, J. Ralph, Y. Huang, I. Mitrovic, S. Hall presentation
  • • "Photodiodes in Deep Submicron CMOS Process for Fully Integrated Optical Receivers" W. Ahmad, M. Törmänen, H. Sjöland presentation
  • • "Physical Understanding of Electron Mobility in Uniaxially Strained InGaAs-OI MOSFETs" S. Kim, M. Yokoyama, Y. Ikku, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
  • • "Scalability of Ultra-Thin-Body and BOX InGaAs MOSFETs on Silicon" L. Czornomaz, N. Daix, P. Kerber, K. Lister, D. Caimi, C. Rossel, M. Sousa, E. Uccelli, J. Fompeyrine presentation
  • • "The Coupled Atom Transistor: a First Realization with Shallow Donors Implanted in a FDSOI Silicon Nanowire" B. Voisin, B. Roche, E. Dupont-Ferrier, B. Sklénard, M. Cobian, X. Jehl, O. Cueto, R. Wacquez, M. Vinet, Y. Niquet, S. De Franceschi, M. Sanquer
  • • "Novel Low Temperature 3D Wafer Stacking Technology for High Density Device Integration" I. Radu, G. Gaudin, W. Van Den Daele, F. Letertre, C. Mazure, L. Di Cioccio, T. Lacave, F. Mazen, P. Scheiblin, T. Signamarcheix, S. Cristoloveanu presentation
  • • "Mobility Enhancement by Integration of TmSiO IL in 0.65nm EOT High-k/Metal Gate MOSFETs" E. Dentoni Litta, P. Hellström, M. Östling presentation
  • • "STI and eSiGe Source/Drain Epitaxy Induced Stress Modeling in 28 nm Technology with Replacement Gate (RMG) Process" D. Jang, M. Garcia Bardon, D. Yakimets, K. Miyaguchi, A. De Keersgieter, T. Chiarella, R. Ritzenthaler, M. Dehan, A. Mercha
  • • "Random Telegraph Noise Analysis to Investigate the Properties of Active Traps of HfO2-Based RRAM in HRS" F. Puglisi, P. Pavan, A. Padovani, L. Larcher
  • • "On the Forming-Free Operation of HfOx Based RRAM Devices: Experiments and Ab Initio Calculations" B. Traoré, E. Vianello, G. Molas, M. Gely, J. Nodin, E. Jalaguier, P. Blaise, B. De Salvo, K. Xue, L. Fonseca, Y. Nishi
  • • "Weibull Analysis of the Kinetics of Resistive Switches Based on Tantalum Oxide Thin Films" Y. Nishi, S. Schmelzer, U. Böttger, R. Waser presentation
  • • "A Two-Step Set Operation for Highly Uniform Resistive Swtiching ReRAM by Controllable Filament" S. Lee, D. Lee, J. Woo, E. Cha, H. Hwang presentation
  • • "ACE: a Robust Variability and Aging Sensor for High-k/Metal Gate SoC" M. Chen, V. Reddy, S. Krishnan, J. Ondrusek, Y. Cao
  • • "Investigation of SRAM Using BTI-Aware Statistical Compact Models" J. Ding, D. Reid, C. Millar, A. Asenov
  • • "Impact of Al2O3 Position on Performances and Reliability in High-K Metal Gated DRAM Periphery Transistors" M. Aoulaiche, E. Simoen, R. Ritzenthaler, T. Schram, H. Arimura, M. Cho, T. Kauerauf, G. Groeseneken, N. Horiguchi, A. Thean, A. Federico, F. Crupi, A. Spessot, C. Caillat, P. Fazan, H. Na, Y. Son, K. Noh presentation
  • • "Threshold Voltage Extraction Techniques and Temperature Effect in Context of Global Variability in UTBB MOSFETs" S. Makovejev, B. Kazemi Esfeh, J. Raskin, D. Flandre, V. Kilchytska, F. Andrieu
  • • "Low-Temperature Transport Characteristics in SOI and sSOI Nanowires Down to 8nm Width: Evidence of IDS and Mobility Oscillations" R. Coquand, S. Barraud, M. Cassé, M. Koyama, V. Maffini-Alvaro, M. Samson, L. Tosti, X. Mescot, G. Ghibaudo, S. Monfray, F. Boeuf, O. Faynot, B. De Salvo
  • • "Guidelines for Symmetric Threshold Voltage in Tunnel FinFETs with Single and Dual Metal Gate Electrodes" W. Mizubayashi, K. Fukuda, T. Mori, K. Endo, Y. Liu, T. Matsukawa, S. O'uchi, Y. Ishikawa, S. Migita, Y. Morita, A. Tanabe, J. Tsukada, H. Yamauchi, M. Masahara, H. Ota
  • • "On the Strain Induced by Arsenic into Silicon" S. Koffel, P. Pichler, J. Lorenz, G. Bisognin, E. Napolitani, D. De Salvador
  • • "High-Ohmic Resistors Using Nanometer-Thin Pure-Boron Chemical-Vapour-Deposited Layers" N. Golshani, V. Mohammadi, S. Ramesh, L. Nanver presentation
  • • "Melt Depth and Time Variations During Pulsed Laser Thermal Annealing with One and More Pulses" M. Hackenberg, M. Rommel, M. Rumler, J. Lorenz, P. Pichler, K. Huet, R. Negru, G. Fisicaro, A. La Magna, N. Taleb, M. Quillec
  • • "Effect of Ions Presence in the SiOCH Inter Metal Dielectric Structure" B. Rebuffat, V. Della Marca, P. Masson, J. Ogier, M. Mantelli, O. Paulet, L. Lopez, R. Laffont presentation
  • • "Novel Back-Biased UTBB Lateral SCR for FDSOI ESD Protections" Y. Solaro, P. Fonteneau, C. Legrand, C. Fenouillet-Beranger, P. Ferrari, S. Cristoloveanu presentation
  • • "Reliability Tests for Discriminating Between Technological Variants of QFN Packaging" M. Bâzu, V. Ilian, D. Vârsescu, L. Galateanu, V. Sikiö, M. Reimets, V. Uhl, M. Weiss presentation
  • • "Multi-Scale Computational Framework for the Evaluation of Variability in the Programing Window of a Flash Cell with Molecular Storage" V. Georgiev, S. Markov, L. Vilà-Nadal, C. Busche, L. Cronin, A. Asenov
  • • "Impact of Statistical Variability and Charge Trapping on 14 nm SOI FinFET SRAM Cell Stability" X. Wang, B. Cheng, A. Brown, C. Millar, J. Kuang, S. Nassif, A. Asenov
  • • "Flicker Noise in Advanced CMOS Technology: Effects of Halo Implant" N. Paydavosi, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu, S. Dey, S. Martin, X. Zhang presentation
  • • "Characterization of N-Channel 4H-SiC MOSFETs: Electrical Measurements and Simulation Analysis" V. Uhnevionak, C. Strenger, A. Burenkov, V. Mortet, E. Bedel-Pereira, J. Lorenz, P. Pichler
  • • "Electrical and Thermoelectrical Properties of Gated InAs Nanowires" P. Mensch, S. Karg, B. Gotsmann, P. Das Kanungo, V. Schmidt, V. Troncale, H. Schmid, H. Riel
  • • "Low Frequency Noise in Strained Silicon Nanowire Array MOSFETs and Tunnel-FETs" S. Richter, S. Vitusevich, S. Pud, J. Li, L. Knoll, S. Trellenkamp, A. Schäfer, S. Lenk, Q. Zhao, A. Offenhäusser, S. Mantl, K. Bourdelle presentation
  • • "Strontium Doped Hafnium Oxide Thin Films: Wide Process Window for Ferroelectric Memories" T. Schenk, S. Mueller, U. Schroeder, R. Materlik, A. Kersch, M. Popovici, C. Adelmann, S. Van Elshocht, T. Mikolajick presentation
  • • "A Novel HfO2-GeS2-Ag Based Conductive Bridge Ram for Reconfigurable Logic Applications" G. Palma, E. Vianello, O. Thomas, H. Oucheikh, S. Onkaraiah, A. Toffoli, C. Carabasse, G. Molas, B. De Salvo
  • • "Nonvolatile Resistive Memory Devices Based on Hydrogenated Amorphous Carbon" L. Dellmann, A. Sebastian, V. Jonnalagadda, C. Santini, W. Koelmans, C. Rossel, E. Eleftheriou
  • • "Monolithic Integration of Pseudo-Spin-MOSFETs Using a Custom CMOS Chip Fabricated Through Multi-Project Wafer Service" R. Nakane, Y. Shuto, H. Sukegawa, Z. Wen, S. Yamamoto, S. Mitani, M. Tanaka, K. Inomata, S. Sugahara
  • • "Nanomagnetic Logic Clocked in the MHz Regime" M. Becherer, J. Kiermaier, S. Breitkreutz, I. Eichwald, G. Csaba, D. Schmitt-Landsiedel
  • • "Micron-Scale Inkjet-Assisted Digital Lithography for Large-Area Flexible Electronics" R. Sporea, A. Alshammari, S. Georgakopoulos, J. Underwood, M. Shkunov, R. Silva
  • • "Design and Array Implementation a Cantilever-Based Non-Volatile Memory Utilizing Vibrational Reset" A. Do, J. Gopal, P. Singh, C. Li, K. Yeo, T. Kim presentation
  • • "RF MEMS Power Sensors for Ultra-Low Power Wake-Up Circuit Applications" W. Vitale, M. Fernández-Bolaños, A. Bazigos, C. Dehollain, A. Ionescu
  • • "Design of a Poly Silicon MEMS Microphone for High Signal-to-Noise Ratio" A. Dehé, M. Wurzer, M. Füldner, U. Krumbein
  • • "Magnetoresistance Measurements and Unusual Mobilitiy Behavior in FD MOSFETs" S. Chang, S. Cristoloveanu, M. Bawedin, J. Lee, J. Lee, S. Mukhopadhyay, B. Piot
  • • "Influence of Device Scaling on Low-Frequency Noise in SOI Tri-Gate N- and P-Type Si Nanowire MOSFETs" M. Koyama, M. Cassé, R. Coquand, S. Barraud, G. Ghibaudo, H. Iwai, G. Reimbold
  • • "Why Are SCE Overestimated in FD-SOI MOSFETs?" C. Navarro Moral, M. Bawedin, F. Andrieu, B. Sagnes, S. Cristoloveanu
  • • "DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation" V. Di Lecce, R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani presentation
  • • "Graphene-Channel FETs for Photonic Frequency Double-Mixing Conversion Over the Sub-THz Band" T. Kawasaki, A. Dobroiu, T. Eto, Y. Kurita, K. Kojima, Y. Yabe, H. Sugiyama, T. Watanabe, S. Takabayashi, T. Suemitsu, V. Ryzhii, K. Iwatsuki, T. Otsuji, Y. Fukada, J. Kani, J. Terada, N. Yoshimoto
  • • "On-Wafer Graphene Diodes for High-Frequency Applications" M. Dragoman, A. Dinescu, D. Dragoman
  • • "Carbon Nanotube Resistors as Gas Sensors: Towards Selective Analyte Detection with Various Metal-Nanotube Interfaces" H. Guerin, H. Le Poche, R. Pohle, M. Fernández-Bolaños, J. Dijon, A. Ionescu
  • • "A Negative Differential Resistance Effect Implemented with a Single MOSFET from 375 K Down to 80 K" V. Vega-González, E. Gutiérrez-Domínguez, F. Guarin
  • • "Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films" D. Osintsev, V. Sverdlov, S. Selberherr
  • • "Compact Modeling of STT-MTJ for SPICE Simulation" Z. Xu, K. Sutaria, C. Yang, C. Chakrabarti, Y. Cao presentation
  • • "Understanding the Conduction Mechanism of the Chalcogenide Ag2S Silver-Doped Through Ab Initio Simulation" T. Todorova, P. Blaise, E. Vianello, L. Fonseca
  • • "Modeling the Dynamic Self-Heating of PCM" G. Marcolini, F. Giovanardi, M. Rudan, F. Buscemi, E. Piccinini, R. Brunetti, A. Cappelli presentation
  • • "Low Power FinFET pH-Sensor with High-Sensitivity Voltage Readout" S. Rigante, P. Livi, M. Wipf, K. Bedner, D. Bouvet, A. Bazigos, A. Rusu, A. Hierlemann, A. Ionescu presentation
  • • "Flexible Platinum Nanoparticle Strain Sensors" E. Skotadis, D. Mousadakos, J. Tanner, D. Tsoukalas, P. Broutas presentation
  • • "MEMS Sensors for High Voltage Lines" V. Moagar-Poladian, G. Moagar-Poladian presentation
  • • "Investigation of Gate Material Ductility Enables Flexible a-IGZO TFTs Bendable to a Radius of 1.7 mm" N. Münzenrieder, L. Petti, C. Zysset, D. Görk, L. Büthe, G. Salvatore, G. Tröster presentation