Jesus A. del Alamo, Massachusetts Institute of Technology
Short biography: Jesus A. del Alamo obtained a Telecommunications Engineer degree from the Polytechnic University of Madrid in 1980 and MS and PhD degrees in Electrical Engineering from Stanford University in 1983 and 1985, respectively. From 1985 to 1988 he was with NTT LSI Laboratories in Atsugi (Japan) and since 1988 he has been with the Department of Electrical Engineering and Computer Science of Massachusetts Institute of Technology where he is currently Donner Professor and MacVicar Faculty Fellow. His current research interests are centered on nanoelectronics based on compound semiconductors. He is also investigating the potential of online laboratories for science and engineering education.Prof. del Alamo was an NSF Presidential Young Investigator. He is a member of the Royal Spanish Academy of Engineering and Fellow of the IEEE. He currently serves as Editor of IEEE Electron Device Letters.
Title: Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS technologies
Abstract: Integrated circuits based on InGaAs Field Effect Transistors are now widely used in the RF front-ends of smart phones and other mobile platforms, wireless LANs, high data rate fiber optic links and many defense and satellite communication systems. InGaAs ICs are also under intense research for new millimeter-wave applications such as collision avoidance radar and gigabit WLANs. In the last few years, as Si CMOS faces mounting difficulties to maintain its historical scaling path, InGaAs-channel MOSFETs have emerged as a credible alternative for mainstream logic technology capable of scaling to the 10 nm node and below. To get to this point, fundamental technical problems had to be solved though there are still many challenges that need to be addressed before the first non-Si CMOS technology becomes a reality. The intense research that this exciting prospect is generating will also reinvigorate the long march of InGaAs FETs towards the first true THz electronics technology. This talk will review progress and challenges of InGaAs-based FET technology for THz and CMOS.